It is well known that semi-discrete high order discontinuous Galerkin (DG) methods satisfy cell entropy inequalities for the square entropy for both scalar conservation laws (\RefOne{Jiang and Shu (1994)} \cite{jiang1994cell}) and symmetric hyperbolic systems (\RefOne{Hou and Liu (2007)} \cite{hou2007solutions}), in any space dimension and for any triangulations. However, this property holds only for the square entropy and the integrations in the DG methods must be exact. It is significantly more difficult to design DG methods to satisfy entropy inequalities for a non-square convex entropy, and / or when the integration is approximated by a numerical quadrature. In this paper, we develop a unified framework for designing high order DG methods which will satisfy entropy inequalities for any given single convex entropy, through suitable numerical quadrature which is specific to this given entropy. Our framework applies from one-dimensional scalar cases all the way to multi-dimensional systems of conservation laws. For the one-dimensional case, our numerical quadrature is based on the methodology established in \RefOne{Carpenter et al (2014)} \cite{carpenter2014entropy} and \RefOne{Gassner (2013)} \cite{gassner2013skew}. The main ingredients are summation-by-parts (SBP) operators derived from Legendre Gauss-Lobatto quadrature, the \RefThree{entropy conservative flux} within elements, and the entropy stable flux at element interfaces. We then generalize the scheme to two-dimensional triangular meshes by constructing SBP operators on triangles based on a special quadrature rule. A local discontinuous Galerkin (LDG) type treatment is also incorporated to achieve the generalization to convection-diffusion equations. Extensive numerical experiments are performed to validate the accuracy and shock capturing efficacy of these entropy stable DG methods.

In this paper, we study the superconvergence behavior of discontinuous Galerkin methods using upwind numerical fluxes for one-dimensional linear hyperbolic equations with degenerate variable coefficients. The study establishes superconvergence results for the flux function approximation as well as for the DG solution itself. To be more precise, we first prove that the DG flux function is superconvergent towards a particular flux function of the exact solution, with an order of $O(h^{k+2})$, when piecewise polynomials of degree $k$ are used. We then prove that the highest superconvergence rate of the DG solution itself is $O(h^{k+\frac 32})$ as the variable coefficient degenerates or achieves the value zero in the domain. As byproducts, we obtain superconvergence properties for the DG solution and the DG flux function at special points and for cell averages. All theoretical findings are confirmed by numerical experiments.

The purpose of this work is to incorporate numerically, in a discontinuous Galerkin (DG) solver of a Boltzmann-Poisson model for hot electron transport, an electronic conduction band whose values are obtained by the spherical averaging of the full band structure given by a local empirical pseudopotential method (EPM) around a local minimum of the conduction band for silicon, as a midpoint between a radial band model and an anisotropic full band, in order to provide a more accurate physical description of the electron group velocity and conduction energy band structure in a semiconductor. This gives a better quantitative description of the transport and collision phenomena that fundamentally define the behaviour of the Boltzmann - Poisson model for electron transport used in this work. The numerical values of the derivatives of this conduction energy band, needed for the description of the electron group velocity, are obtained by means of a cubic spline interpolation. The EPM-Boltzmann-Poisson transport with this spherically averaged EPM calculated energy surface is numerically simulated and compared to the output of traditional analytic band models such as the parabolic and Kane bands, numerically implemented too, for the case of 1D $n^+-n-n^+$ silicon diodes with $400nm$ and $50nm$ channels. Quantitative differences are observed in the kinetic moments related to the conduction energy band used, such as mean velocity, average energy, and electric current (momentum).