Mechanism of porous-silicon luminescence

F Bentosela Pavel Exner VA Zagrebnov

TBD mathscidoc:1910.43164

Physical Review B, 57, (3), 1382, 1998.1
We discuss the discrete spectrum induced by bulges on threadlike mesoscopic objects, using two models, a continuous hard-wall waveguide and a discrete tight-binding model with two sorts of atomic orbitals. We show that elongated bulges induce numerous quasibound states. In the discrete model we also evaluate the probability of transition between the localized states and extended ones of the valence band. We suggest this as a mechanism governing the porous-silicon luminescence. In addition, the model reproduces the dominance of nonradiative transitions, blueshift for finer textures, and luminiscence suppression at low temperatures.
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@inproceedings{f1998mechanism,
  title={Mechanism of porous-silicon luminescence},
  author={F Bentosela, Pavel Exner, and VA Zagrebnov},
  url={http://archive.ymsc.tsinghua.edu.cn/pacm_paperurl/20191020131949861308693},
  booktitle={Physical Review B},
  volume={57},
  number={3},
  pages={1382},
  year={1998},
}
F Bentosela, Pavel Exner, and VA Zagrebnov. Mechanism of porous-silicon luminescence. 1998. Vol. 57. In Physical Review B. pp.1382. http://archive.ymsc.tsinghua.edu.cn/pacm_paperurl/20191020131949861308693.
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