In this paper we consider the drift-diffusion (DD) model of one dimensional semiconductor devices, which is a system involving not only first derivative convection terms but also second derivative diffusion terms and a coupled Poisson potential equation. Optimal error estimates are obtained for both the semi-discrete and fully discrete local discontinuous Galerkin (LDG) schemes with smooth solutions. In the fully discrete scheme, we couple the implicit-explicit (IMEX) time discretization with the LDG spatial discretization, in order to allow larger time steps and to save computational cost. The main technical difficulty in the analysis is to treat the inter-element jump terms which arise from the discontinuous nature of the numerical method and the nonlinearity and coupling of the models. A simulation is also performed to validate the analysis.

Denote by Mnthe set of n ×ncomplex matrices. Let f:Mn→[0, ∞)be a continuous map such that f(μUAU∗) =f(A)for any complex unit μ, A ∈Mnand unitary U∈Mn, f(X) =0if and only if X=0and the induced map t →f(tX)is monotonically increasing on [0, ∞)for any rank onenilpotent X∈Mn. Characterization is given for surjective maps φon Mnsatisfying f(AB−BA) =f(φ(A)φ(B) −φ(B)φ(A)). The general theorem isthen used to deduce results on special cases when the function is the pseudo spectrum and the pseudo spectral radius.

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Let$F$be families of meromorphic functions in a domain$D$, and let$R$be a rational function whose degree is at least 3. If, for any$f∈$$F$, the composite function$R(f)$has no fixed-point in$D$, then$F$is normal in$D$. The number 3 is best possible. A new and much simplified proof of a result of Pang and Zalcman concerning normality and, shared values is also given.

Suppose we lhave n observationis ftom Y= X+ c, where e is nieasuremiienit error with kiowin distributioni, and the denesity f of X is uniknowii withi thte nloln-paraniietric conistrainit