The purpose of this work is to incorporate numerically, in a discontinuous Galerkin (DG) solver of a
Boltzmann-Poisson model for hot electron transport, an electronic conduction band whose values are
obtained by the spherical averaging of the full band structure given by a
local empirical
pseudopotential method (EPM) around a local minimum of the conduction
band for silicon, as a
midpoint between a radial band model and an anisotropic full band, in order to provide a more
accurate physical description of the electron group velocity and conduction energy band structure in
a semiconductor.
This gives a better quantitative description of the transport and collision phenomena
that fundamentally define the behaviour of the Boltzmann - Poisson model for electron transport used in this work.
The numerical values of the derivatives of this conduction energy band, needed for the
description of the electron group velocity, are obtained by means of a
cubic spline interpolation.
The EPM-Boltzmann-Poisson transport with this spherically averaged EPM
calculated energy surface is
numerically simulated and compared to the output of traditional analytic
band models such as the
parabolic and Kane bands, numerically implemented too, for the case of
1D $n^+-n-n^+$ silicon
diodes with $400nm$ and $50nm$ channels. Quantitative differences are
observed in the kinetic moments related to the conduction energy band
used, such as mean velocity, average energy, and electric current (momentum).