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We propose an inverse iterative method for computing the Perron pair of an irreducible nonnegative third order tensor. The method involves the selection of a parameter $\theta_k$ in the $k$th iteration. For every positive starting vector, the method converges quadratically and is positivity preserving in the sense that the vectors approximating the Perron vector are strictly positive in each iteration. It is also shown that $\theta_k=1$ near convergence. The computational work for each iteration of the proposed method is less than four times (three times if the tensor is symmetric in modes two and three, and twice if we also take the parameter to be $1$ directly) that for each iteration of the Ng--Qi--Zhou algorithm, which is linearly convergent for essentially positive tensors.

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This article focuses on numerically studying the eigenstructure behavior of generalized eigenvalue problems (GEPs) arising in three dimensional (3D) source-free Maxwell's equations with magnetoelectric coupling effects which model 3D reciprocal chiral media. It is challenging to solve such a large-scale GEP efficiently. We combine the null-space free method with the inexact shift-invert residual Arnoldi method and MINRES linear solver to solve the GEP with a matrix dimension as large as 5,308,416. The eigenstructure is heavily determined by the chirality parameter $\gamma$. We show that all the eigenvalues are real and finite for a small chirality $\gamma$. For a critical value $\gamma = \gamma^*$, the GEP has $2 \times 2$ Jordan blocks at infinity eigenvalues. Numerical results demonstrate that when $\gamma$ increases from $\gamma^*$, the $2 \times 2$ Jordan block will first split into a complex conjugate eigenpair, then rapidly collide \tr{with} the real axis and bifurcate into \tr{positive (resonance) and negative eigenvalues with modulus} smaller than the other existing positive eigenvalues. The resonance band also exhibits an anticrossing interaction. Moreover, the electric and magnetic fields of the resonance modes are localized inside the structure, with only a slight amount of field leaking into the background (dielectric) material.